PUBLICATIONS
Jeffrey Bokor

  1. Bischel, W. K., Bokor, J., Dallarosa, J., and Rhodes, C. K. "ArF laser photolysis of OCSe. II. Effect of vibrational excitation on Se(1S) quantum yields," J. Chem. Phys. 70 (12), 5593-5597, 1979.  
  2. Bischel, W. K., Bokor, J., Kligler, D. J., and Rhodes, C. K. "Nonlinear optical processes in atoms and molecules using rare-gas halide lasers," IEEE J. Quantum Electron. QE-15 (5), 380-392, 1979.  
  3. Bokor, J., Bischel, W. K., and Rhodes, C. K. "Doppler-free spectroscopy of the v2 band in 14NH3: Application to 16-µm generation," J. Appl. Phys. 50 (7), 4541-4544, 1979.  

  4. Eggleston, J., Dallarosa, J., Bischel, W. K., Bokor, J., and Rhodes, C. K. "Generation of 16-µm radiation in 14NH3 by two-quantum excitation of the 2v–2 (7,5) state," J. Appl. Phys. 50 (6), 3867-3870, 1979.  

  5. Bokor, J. and Rhodes, C. K. "Energy splitting between the B and C states of xenon chloride," J. Chem. Phys. 73 (6), 2626-2628, 1980.  

  6. Bokor, J., Zavelovich, J., and Rhodes, C. K. "Isotope effect in multiphoton ultraviolet photolysis of CO," J. Chem. Phys. 72 (2), 965-971, 1980.  

  7. Bokor, J., Zavelovich, J., and Rhodes, C. K. "Multiphoton ultraviolet spectroscopy of some 6p levels in krypton," Phys. Rev. A21 (5), 1453-1459, 1980.  

  8. Egger, H., Hawkins, R. T., Bokor, J., Pummer, H., Rothschild, M., and Rhodes, C. K. "Generation of high-spectral-brightness tunable XUV radiation at 83 nm," Opt. Lett. 5 (7), 282-284, 1980.  

  9. Hawkins, R. T., Egger, H., Bokor, J., and Rhodes, C. K. "A tunable, ultrahigh spectral brightness KrF* excimer laser source," Appl. Phys. Lett. 36 (6), 391-392, 1980.  

  10. Kligler, D. J., Bokor, J., and Rhodes, C. K. "Collisional and radiative properties of the H2 E,F 1SIGMA9 state," Phys. Rev. A21 (2), 607-617, 1980.  

  11. Bokor, J., Freeman, R. R., Panock, R. L., and White, J. C. "Generation of high-brightness coherent radiation in the vacuum ultraviolet by four-wave parametric oscillation in mercury vapor," Opt. Lett. 6 (4), 182-184, 1981.  

  12. Bokor, J., Freeman, R. R., White, J. C., and Storz, R. H. "Two-photon excitation of the n = 3 level in H and D atoms," Phys. Rev. A24 (1), 612-614, 1981.  

  13. Rothschild, M., Egger, H., Hawkins, R. T., Bokor, J., Pummer, H., and Rhodes, C. K. "High-resolution spectroscopy of molecular hydrogen in the extreme ultraviolet region," Phys. Rev. A23 (1), 206-213, 1981.  

  14. White, J. C., Bokor, J., Freeman, R. R., and Henderson, D. "Tunable ArF* excimer-laser source," Opt. Lett. 6 (6), 293-294, 1981.  

  15. Bokor, J., Freeman, R. R., and Cooke, W. E. "Autoionization-pumped laser," Phys. Rev. Lett. 48 (18), 1242-1245, 1982.  

  16. Bucksbaum, P. H., Bokor, J., Storz, R. H., and White, J. C. "Amplification of ultrashort pulses in krypton fluoride at 248 nm," Opt. Lett. 7 (9), 399-401, 1982.  

  17. Bucksbaum, P. H., Bokor, J., Storz, R. H., White, J. C., and Auston, D. H. "Generation and pulsewidth measurement of amplified ultrashort ultraviolet laser pulses in krypton fluoride." In K B. Eisenthal, R. M. Hochstrasser, W. Kaiser, and A. Laubereau (eds.), Picosecond Phenomena III, New York: Springer-Verlag, 1982, p. 130-133.

  18. Freeman, R. R., Bokor, J., and Cooke, W. E. "Four-wave parametric mixing in optically inverted barium ions," Phys. Rev. A26 (5) 3029-3030, 1982.  

  19. Heaven, M., Miller, T. A., Freeman, R. R., White, J. C., and Bokor, J. "Two-photon absorption, laser-induced fluorescence detection of Cl atoms," Chem. Phys. Lett. 86 (5, 6), 458-462, 1982.  

  20. White, J. C., Bokor, J., and Henderson, D. "Optically pumped atomic thulium lasers," IEEE J. Quantum Electron. QE-18 (3), 320-322, 1982.  

  21. Bokor, J., Bucksbaum, P. H., and Freeman, R. R. "Generation of 35.5-nm coherent radiation," Opt. Lett. 8 (4), 217-219, 1983.  

  22. Bokor, J., Bucksbaum, P. H., and Freeman, R. R. "Generation of 35.5 nm coherent radiation." In H. P. Weber and W. Luthy (eds.), Laser Spectroscopy VI, New York: Springer-Verlag, 1983, p. 382-384.

  23. Bokor, J., Eichner, L., Storz, R. H., Bucksbaum, P. H., and Freeman, R. R. "Wavelength conversion with excimer lasers." In C. K. Rhodes, H. Egger, and H. Pummer (eds.), Excimer Lasers-1983, New York: American Institute of Physics, 1983. p. 143-150.

  24. Falcone, R. W. and Bokor, J. "Dichroic beam splitter for extreme-ultraviolet and visible radiation," Opt. Lett. 8 (1), 21-23, 1983.  

  25. Freeman, R. R., Jopson, R. M., Bokor, J., and Cooke, W. E. "Planetary atoms." In H. P. Weber and W. Luthy (eds.), Laser Spectroscopy VI, New York: Springer-Verlag, 1983, p. 220-223.

  26. Jopson, R. M., Darack, S., Freeman, R. R., and Bokor, J. "Laser-plasma-induced extreme-ultraviolet radiation from liquid mercury," Opt. Lett 8 (5), 265-267, 1983.  

  27. Jopson, R. M., Freeman, R. R., Cooke, W. E., and Bokor, J. "Electron shake-up in two-photon excitation of core electrons of Rydberg autoionizing states," Phys. Rev. Lett. 51 (18), 1640-1643, 1983.  

  28. Bloomfield, L. A., Freeman, R. R., Cooke, W. E., and Bokor, J. "Angular momentum dependence of autoionization rates in doubly excited Rydberg states of Ba," Phys. Rev. Lett. 53 (23), 2234-2237, 1984.  

  29. Bucksbaum, P. H. and Bokor, J. "Measurement of ultrafast melting and regrowth velocities in pulsed laser heated silicon." In J. C. C. Fan and N. M. Johnson (eds.), Energy Beam-Solid Interactions and Transient Thermal Processing, New York: Elsevier, 1984, p. 93-98.

  30. Bucksbaum, P. H. and Bokor, J. "Rapid melting and regrowth velocities in silicon heated by ultraviolet picosecond laser pulses," Phys. Rev. Lett. 53 (2), 182-185, 1984.  

  31. Cooke, W. E., Jopson, R. M., Bloomfield, L A., Freeman, R. R., and Bokor, J. "Correlations in highly excited two-electron atoms: Planetary behavior." In S. E. Harris and T. B. Lucatorto (eds.), Laser Techniques in the Extreme Ultraviolet, New York: American Institute of Physics, 1984, p. 91-100.

  32. Haight, R., Bokor, J., Storz, R. H., Stark, J., Freeman, R. R., and Bucksbaum, P. H. "Ultraviolet photoemission studies of surfaces using picosecond pulses of coherent XUV radiation." In D. H. Auston and K. B. Eisenthal (eds.), Ultrafast Phenomena IV, New York: Springer-Verlag, 1984, p. 413-416.

  33. Jopson, R. M., Freeman, R. R., Cooke, W. E., and Bokor, J. "Two-photon spectroscopy of 7sn´d autoionizing states of barium." Phys. Rev. A29 (6), 3154-3158, 1984.  

  34. Bokor, J., Haight, R., Freeman, R. R., and Bucksbaum, P. H. "Picosecond time-resolved photoemission spectroscopy of semiconductor surfaces." In T. W. Hansch and Y. R. Shen (eds.), Laser Spectroscopy VII, New York: Springer-Verlag, 1985, p. 340-343.

  35. Bokor, J., Haight, R., Stark, J., Storz, R. H., Freeman, R. R., and Bucksbaum, P. H. "Picosecond time resolved photoemission study of the InP(110) surface." In G. A. Mourou, D. M. Bloom, and C.-H. Lee (eds.), Picosecond Electronics and Optoelectronics, New York: Springer-Verlag, 1985, p. 94-96.

  36. Bokor, J., Haight, R., Storz, R. H., Stark, J., Freeman, R. R., and Bucksbaum, P. H. "Time- and angle-resolved photoemission study of InP(110)," Phys. Rev. B32 (6), 3669-3675, 1985.  

  37. Freeman, R. R., Bloomfield, L. A., Bokor, J., and Cooke, W. E. "Laser investigations of electron correlations: Doubly excited states of Ba." In T. W. Hansch and Y. R. Shen (eds.), Laser Spectroscopy VII, New York: Springer-Verlag, 1985, p. 77-80.

  38. Haight, R., Bokor, J., Stark, J., Storz, R. H., Freeman, R. R., and Bucksbaum, P. H. "Picosecond time-resolved photoemission study of the InP(110) surface," Phys. Rev. Lett. 54 (12), 1302-1305, 1985.  

  39. Thompson, M. O., Bucksbaum, P. H., and Bokor, J. "Relation between temperature and solidification velocity in rapidly cooled liquid silicon." In D. K. Biegelson, G. A. Rozgonyi, and C. V. Shank (eds.), Energy Beam-Solid Interactions and Transient Thermal Processing 1984, Pittsburgh, PA: Materials Research Society, 1985, p. 181-186.

  40. Attwood, D. T. and Bokor, J. (eds.), Short Wavelength Coherent Radiation: Generation and Applications, New York: American Institute of Physics, 1986.

  41. Bokor, J., Johnson, A. M., Storz, R. H., and Simpson, W. M. "High-speed circuit measurements using photoemission sampling," Appl. Phys. Lett. 49 (4), 226-228, 1986.  

  42. Bokor, J., Johnson, A. M., Storz, R. H., and Simpson, W. M. "High-speed circuit measurements using photoemission sampling." In G. R. Fleming and A. E. Siegman (eds.), Ultrafast Phenomena V, New York: Springer-Verlag, 1986, p. 123-126.

  43. Bokor, J., Storz, R., Freeman, R. R., and Bucksbaum, P. H. "Picosecond surface electron dynamics on photoexcited Si(111)2×1 surfaces," Phys. Rev. Lett. 57 (7), 881-884, 1986.  

  44. Haight, R. and Bokor, J. "Direct observation of adsorbate-induced band-gap states on GaAs(100)," Phys. Rev. Lett. 56 (26), 2846-2849, 1986.  

  45. Haight, R., Bokor, J., Freeman, R. R., and Bucksbaum, P. H. "Time and angle resolved ultraviolet photoemission spectroscopy studies of single crystal surface and interfaces," J. Vac. Sci. Technol. A 4(3), 1481-1486, 1986.  

  46. Bokor, J., Johnson, A. M., Simpson, W. M., Storz, R. H., and Smith, P. R. "Coplanar vacuum photodiode for measurement of short-wavelength picosecond pulses," Appl. Phys. Lett. 53 (26), 2599-2601, 1988.  

  47. Tang, S. L., Bokor, J., and Storz, R. H. "Direct force measurement in scanning tunneling microscopy," Appl. Phys. Lett. 52 (3), 188-190, 1988.  

  48. Bokor, J. "Ultrafast dynamics at semiconductor and metal surfaces," Science 246 (4934), 1130-1134, 1989.  

  49. Bokor, J. and Halas, N. J. "Time-resolved study of silicon surface recombination," IEEE J. Quantum Electron. 25(12), 2550-2555, 1989.  

  50. Halas, N. J. and Bokor, J. "Surface recombination of the Si(111)2×1 surface," Phys. Rev. Lett. 62 (14), 1679-1682, 1989.  

  51. Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Gregus, J., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., White, D. L., Windt, D., Wood, O. R. II, and Bruning, J. H. "Reduction imaging at 14 nm using multilayer-coated optics: Printing of features smaller than 0.1 µm," J. Vac. Sci. Technol. B 8(6), 1509-1513, 1990.  

  52. Jewell, T. E., Becker, M. M., Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Mansfield, W. M., MacDowell, A. A., O'Malley, M. L., Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., White, D. L., Wood, O. R. II. "20:1 projection soft X-ray lithography using tri-level resist," Proc. SPIE, San Diego, CA, June 1990.

  53. White, D. L., Becker, M., Bokor, J., Bjorkholm, J. E., Eichner, L., Freeman, R. R., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., O'Malley, M. L., Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., Windt, D. L., and Wood, O. R. II. "Soft X-ray projection lithography: Developing a practical printer," Proc. SPIE, San Diego, CA, June 1990.

  54. White, D. L., Becker, M., Bokor, J., Bjorkholm, J. E., Eichner, L., Freeman, R. R., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., O'Malley, M. L., Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., Windt, D. L., and Wood, O. R. II. "Soft X-ray projection lithography with 20× reduction and 0.1 mm resolution," Proc. SPIE, San Diego, CA, June 1990.

  55. Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Gregus, J., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., O'Malley, M. L, Raab, E. L., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., White, D. L., Windt, D. L., and Wood, O. R. II. "Experiments in projection lithography using soft X-rays," Microelectronic Eng. 13 (1-4), 243-250, 1991.
  56. Fann, W. S., Storz, R., and Bokor, J. "Observation of above-threshold multiphoton photoelectric emission from image-potential surface states," Phys. Rev. B44 (19), 10980-10982, 1991.  

  57. Kubiak, G. D., Tichenor, D. A., Malinowski, M. E., Stulen, R. H., Haney, S. J., Berger, K. W., Brown L. A., Bjorkholm, J. E., Freeman, R. R., Mansfield, W. M., Tennant, D. M., Wood, O. R. II, Bokor, J., Jewell, T. E., White, D. L., Windt, D. L., and Waskiewicz, W. K. "Diffraction-limited soft X-ray projection lithography with a laser plasma source," J. Vac. Sci. Technol. B 9(6), 3184-3188, 1991.  

  58. MacDowell, A. A., Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Mansfield, W. M., Pastalan, J., Szeto, L. H., Tennant, D. M., Wood, O. R. II, Jewell, T. E., Waskiewicz, W. K., White, D. L., Windt, D. L., Silfvast, W. T., and Zernike, F. "Soft X-ray projection lithography using a 1:1 ring field optical system," J. Vac. Sci. Technol. B 9(6), 3193-3197, 1991.  

  59. Mohideen, U., Tom, H. W. K., Freeman, R. R., Bokor, J., and Bucksbaum, P. H. "Nonlinear Compton scattering in a pulsed focused laser beam." In P. H. Bucksbaum and N. Ceglio (eds.), Short-Wavelength Coherent Radiation,
  60. Murnane, M., Kapteyn, H., Falcone, R., Gaylord, T., Glytsis, E., Gnall, R. P., Mansfield, W. M., and Bokor, J. "Efficient coupling of high-intensity sub-picosecond laser pulses into solid grating targets." In P. H. Bucksbaum and N. Ceglio (eds.), Short-Wavelength Coherent Radiation, Washington, D.C.: Optical Society of America, 1991.

  61. Tichenor, D. A., Kubiak, G. D., Malinowski, M. E., Stulen, R. H., Haney, S. J., Berger, K. W., Brown, L. A., Freeman, R. R., Mansfield, W. M., Wood, O. R. II, Tennant, D. M., Bjorkholm, J. E., MacDowell, A. A., Bokor, J., Jewell, T. E., White, D. L., Windt, D. L., and Waskiewicz, W. K. "Diffraction-limited soft x-ray projection imaging using a laser plasma source," Opt. Lett. 16 (20), 1557-1559, 1991.  

  62. Tom, H. W. K., Sher, M. H., Wood, O. R. II, Mansfield, W. M., Mohideen, U., Freeman, R. R., and Bokor, J. "High damage threshold gratings using coated silicon substrates." In P. H. Bucksbaum and N. Ceglio (eds.), Short-Wavelength Coherent Radiation, Washington, D.C.: Optical Society of America, 1991.

  63. White, D. L., Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., Szeto, L. H., Taylor, D. W., Tennant, D. M., Waskiewicz, W. K., Windt, D. L., and Wood, O. R. II. "Soft X-ray projection lithography," Solid State Technology 34 (7), 37-42, 1991.
  64. Wood, O. R. II, Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Jewell, T. E., Mansfield, W. M., MacDowell, A. A., Szeto, L. H., Tennant, D. M., Waskiewicz, W. K., White, D. L., Windt, D. L., and Bruning, J. H. "High resolution soft-X-ray projection imaging." In J. Bokor (ed.), Soft-X-Ray Projection Lithography, Washington, D.C.: Optical Society of America, 1991.

  65. Bokor, J. and Haight, R. "Multiphoton photoemission." In S. Kevan (ed.), Angle-Resolved Photoemission, Amsterdam: Elsevier, 1992.

  66. Fann, W. S., Storz, R., Tom, H. W. K., and Bokor, J. "Direct measurement of nonequilibrium electron-energy distributions in subpicosecond laser-heated gold films," Phys. Rev. Lett. 68 (18), 2834-2837, 1992.  

  67. Fann, W. S., Storz, R., Tom, H. W. K., and Bokor, J. "Electron thermalization in gold," Phys. Rev. B46 (20), 13592-13595, 1992.  

  68. MacDowell, A. A., Bjorkholm, J. E., Bokor, J., Eichner, L., Freeman, R. R., Pastalan, J., Silfvast, W. T., Szeto, L. H., Tennant, D. M., Wood, O. R. II, Jewell, T. E., Mansfield, W. M., Waskiewicz, W. K., White, D. L., and Windt, D. L. "Reduction imaging with soft X rays for projection lithography," Rev. Sci. Instrum. 63 (1), 737-740, 1992.  

  69. Mohideen, U., Tom, H. W. K., Freeman, R. R., Bokor, J., and Bucksbaum, P. H. "Interaction of free electrons with an intense focused laser pulse in Gaussian and conical axicon geometries," J. Opt. Soc. Am. B 9

  70. Park, B. G., Bokor, J., Luftman, H. S., Rafferty, C. S., and Pinto, M. R. "Ultrashallow junctions for ULSI using As+2 implantation and rapid thermal anneal," IEEE Electron Device Lett. 13 (10), 507-509, 1992.  

  71. Yan, R. H., Lee, K. F., Jeon, D. Y., Kim, Y. O., Park, B. G., Pinto, M. R., Rafferty, C. S., Tennant, D. M., Westerwick, E. H., Chin, G. M., Morris, M. D., Early, K., Mulgrew, P., Mansfield, W. M., Watts, R. K., Voshchenkov, A. M., Bokor, J., Swartz, R. G., and Ourmazd, A. "High performance 0.1-µm room temperature Si MOSFETs," 1992 Symposium on VLSI Technology Digest of Technical Papers, p. 86-87, 1992.  

  72. Yan, R.-H., Lee, K. F., Jeon, D. Y., Kim, Y. O., Park, B. G., Pinto, M. R., Rafferty, C. S., Tennant, D. M., Westerwick, E. H., Chin, G. M., Morris, M. D., Early, K., Mulgrew, P., Mansfield, W. M., Watts, R. K., Voshchenkov, A. M., Bokor, J., Swartz, R. G., and Ourmazd, A. "89-GHz room-temperature silicon MOSFET's," IEEE Electron Device Lett. 13 (5), 256-258, 1992.  

  73. Attwood, D., Sommargren, G., Beguiristain, R., Nguyen, K., Bokor, J., Ceglio, N., Jackson, K., Koike, M., and Underwood, J. "Undulator radiation for at-wavelength interferometry of optics for extreme-ultraviolet lithography," Appl. Opt. 32 (34), 7022-7031, 1993.  

  74. Fann, W. S., Storz, R., Tom, H. W. K., and Bokor, J. "Direct measurement of nonequilibrium electron-energy distributions in sub-picosecond laser-heated gold films," Surface Sci. 283, 221-225, 1993.  

  75. MacDowell, A. A., Bjorkholm, J. E., Early, K., Freeman, R. R., Himel, M. D., Mulgrew, P. P., Szeto, L. H., Taylor, D. W., Tennant, D. M., Wood, O. R. II, Bokor, J., Eichner, L., Jewell, T. E., Waskiewicz, W. K., White, D. L., Windt, D. L., D'Souza, R. M., Silfvast, W. T., and Zernike, F., "Soft-x-ray projection imaging with a 1:1 ring-field optic," Appl. Opt. 32 (34), 7072-7078, 1993.  

  76. Mohideen, U., Sher, M. H., Tom, H. W. K., Aumiller, G. D., Wood, O. R. II, Freeman, R. R., Bokor, J., and Bucksbaum, P. H. "High intensity above-threshold ionization of He," Phys. Rev. Lett. 71 (4), 509-512, 1993.  

  77. Murnane, M. M., Kapteyn, H. C., Gordon, S. P., Bokor, J., Glytsis, E. N., and Falcone, R. W. "Efficient coupling of high-intensity subpicosecond laser pulses into solids," Appl. Phys. Lett. 62 (10), 1068-1070, 1993.  

  78. Park, B., King, C. A., Eaglesham, D. J., Sorsch, T. W., Weir, B., Luftman, H., Bokor, J., and Kim, Y. O. "Ultrashallow p+n junctions formed by diffusion from a RTCVD-deposited B:Ge layer," Proc. SPIE 2091, p. 122, 1993.
  79. Sher, M. H., Mohideen, U., Tom, H. W. K., Wood, O. R. II, Aumiller, G. D., McIlrath, T. J., Bokor, J., Freeman, R. R., and Sugar, J. "Soft X-ray pulse length measurement by pump-probe absorption spectroscopy," Proc. SPIE 1860, p. 112, 1993.
  80. Tichenor, D. A., Kubiak, G. D., Malinowski, M. E., Stulen, R. H., Haney, S. J., Berger, K. W., Brown, L. A., Sweatt, W. C., Bjorkholm, J. E., Freeman, R. R., Himel, M. D., MacDowell, A. A., Tennant, D. M., Wood, O. R. II, Bokor, J., Jewell, T. E., Mansfield, W. M., Waskiewicz, W. K., White D. L, and Windt, D. L. "Soft-x-ray projection lithography experiments using Schwarzschild imaging optics," Appl. Opt. 32 (34), 7068-7071, 1993.  

  81. Assaderaghi, F., Sinitsky, D., Parke, S., Bokor, J., Ko, P. K., and Hu, C. "A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation," IEDM Technical Digest, p. 479-482, 1994.  

  82. Assaderaghi, F., Parke, S., Sinitsky, D., Bokor, J., Ko, P. K., and Hu, C. "A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation," IEEE Electron Device Lett. 15 (12), 510-512, 1994.  

  83. Assaderaghi, F., Sinitsky, D., Gaw, H., Bokor, J., Ko, P. K. and Hu, C. "Saturation velocity and velocity overshoot of inversion layer electrons and holes," IEDM Technical Digest, p. 479-482, 1994.  

  84. Goldberg, K. A., Beguiristain, R., Bokor, J., Medecki, H., Jackson, K., Attwood, D. T., Sommargren, G. E., Spallas, J. P., and Hostetler, R. "At-wavelength testing of optics for EUV," Proc. SPIE 2437, p. 347, 1995.
  85. Goldberg, K. A., Beguiristain, R., Bokor, J., Medecki, H., Jackson, K., Attwood, D. T., Sommargren, G. E., Spallas, J. P., and Hostetler, R. "Point diffraction interferometry at EUV wavelengths." In D. T. Attwood and F. Zernike (eds.), Extreme Ultraviolet Lithography, Washington, D.C.: Optical Society of America, 1994.

  86. Goldberg, K. A., Beguiristain, R., Bokor, J., Medecki, H., Attwood, D. T., Jackson, K., Tejnil, E., and G. E. Sommargren, G. E. "Progress towards lambda/20 extreme ultraviolet interferometry," J. Vac. Sci. Technol. B 13(6), 2923-2927, 1995.  

  87. Wann, H. C., Hu, C., Noda, K., Sinitsky, D., Assaderaghi, F., and Bokor, J. "Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications," Proc. 1995 Symposium on Technology, Systems, and Applications, 159-163, 1995.  

  88. Bokor, J., Neureuther, A. R., and Oldham, W. G., "Advanced lithography for ULSI," IEEE Circ. And Dev. 12, 11-15, 1996.  

  89. Budiarto, E., Margolies, J., Jeong, S., Son, J., and Bokor, J. "High-intensity terahertz pulses at 1-kHz repetition rate," IEEE J. Quantum Electron. 32 (10), 1839-1846, 1996.  

  90. Goldberg, K. A., Tejnil, E., and Bokor, J. "A 3-D numerical study of pinhole diffraction to predict the accuracy of EUV point diffraction interferometry." In G. D. Kubiak and D. R. Kania (eds.), OSA Trends in Optics and Photonics Vol. 4, Extreme Ultraviolet Lithography, Washington, D.C.: Optical Society of America, 133-137, 1996.

  91. Jeong, S., Zacharias, H., and Bokor, J. "Ultrafast carrier dynamics on the Si(100)2×1 surface," Phys. Rev. B54 (24), R17300-R17303, 1996.  

  92. Medecki, H., Tejnil, E., Goldberg, K. A., and Bokor, J. "Phase-shifting point diffraction interferometer," Opt. Lett. 21 (19), 1526-1528, 1996.  

  93. Nguyen, K. B., Cardinale, G. F., Tichenor, D. A., Kubiak, G. D., Berger, K., Ray-Chaudhuri, A. K., Perras, Y., Haney, S. J., Nissen, R., Krenz, K., Stulen, R. H., Fujioka, H., Hu, C., Bokor, J., Tennant, D. M., and Fetter, L. A. "Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography," J. Vac. Sci. Technol. B 14(6), 4188-4192, 1996.  

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  104. Orenstein, J., Bokor, J., Budiarto, E., Corson, J., Mallozzi, R., Bozovic, I., and Eckstein, J. N. "Nonlinear electrodynamics in cuprate superconductors," Physica C 282, 252-255, 1997.  

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  114. Jeong, S., Idir, M., Johnson, L., Lin, Y., Batson, P., Levesque, R., Kearney, P., Yan, P.-Y., Gullikson, E., Underwood, J. H., and Bokor, J. "Actinic detection of EUVL mask blank defects," Proc. SPIE 3546, p. 524-530, 1998.
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  119. Tejnil, E., Goldberg, K. A., and Bokor, J. "Phase effects owing to multilayer coatings in a two-mirror extreme-ultraviolet Schwarzschild objective," Appl. Opt. 37 (34), 8021-8029, 1998.  

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  123. Goldberg, K. A., Naulleau, P., Lee, S.-H., Chang, C., Bresloff, C., Gaughan, R., Chapman, H. N., Goldsmith, J., and Bokor, J. "Direct comparison of EUV and visible-light interferometries," Proc. SPIE 3676, p. 635-642, 1999.
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  132. Lutz, R. C., Specht, P., Zhao, R., Jeong, S., Bokor, J., and Weber, E. R. "Thermal stabilization of non-stoichiometric GaAs through beryllium doping," Defect and Impurity Engineered Semiconductors II. Symposium Proc., p. 55-59, 1999.

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  134. Naulleau, P. P., Goldberg, K. A., Lee, S. H., Chang, C., Attwood, D., and Bokor, J. "Extreme-ultraviolet phase-shifting point-diffraction interferometer: A wave-front metrology tool with subangstrom reference-wave accuracy," Appl. Opt. 38 (35), 7252-7263, 1999.  

  135. Naulleau, P., Goldberg, K. A., Lee, S. H., Chang-Hasnain, C., Batson, P., Attwood, D., and Bokor, J. "Recent advances in EUV phase-shifting point diffraction interferometry," Proc. SPIE 3767, p. 154-163, 1999.
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  137. Pu, N.-W., Bokor, J., Jeong, S., and Zhao, R.-A. "Picosecond ultrasonic study of Mo/Si multilayer structures using an alternating-pump technique," Appl. Phys. Lett. 74 (2), 320-322, 1999.  

  138. Pu, N.-W., Jeong, S., Zhao, R.-A., and Bokor, J. "Nondestructive picosecond ultrasonic characterization of Mo/Si multilayers using a novel pump-probe scheme," Proc. SPIE 3749, p. 196-197, 1999.
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  141. Zhao, R., Specht, P., Lutz, R. C., Pu, N.-W., Jeong, S., Bokor, J., and Weber, E. R. "Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium," Proc. 10th International Semiconducting and Insulating Materials, p. 130-133, 1999.

  142. Chang, L., Tang, S., King, T.-J., Bokor, J., and Hu, C. "Gate length scaling and threshold voltage control of double-gate MOSFETs," IEDM Technical Digest, p. 719-722, 2000.  

  143. Choi, Y.-K., Asano, K., Lindert, N., Subramanian, V., King, T.-J., Bokor, J., and Hu, C. "Ultrathin-body SOI MOSFET for deep-sub-tenth micron era," IEEE Electron Device Lett. 21 (5), 254-255, 2000.  

  144. Choi, Y.-K., Jeon, Y.-C., Ranade, P., Takeuchi, H., King, T.-J., Bokor, J., and Hu, C. "30nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised S/D," 58th Annual Device Research Conf. Digest, p. 23-24, 2000.  

  145. Goldberg, K. A., Naulleau, P., Batson, P., Denham, P., Anderson, E. H., Chapman, H., and Bokor, J. "Extreme ultraviolet alignment and testing of a four-mirror ring field extreme ultraviolet optical system," J. Vac. Sci. Technol. B 18(6), 2911-2915, 2000.  

  146. Goldberg, K. A., Naulleau, P., Batson, P. J., Denham, P., Anderson, E. H., Bokor, J., and Chapman, H. N. "EUV interferometry of a four-mirror ring-field EUV optical system," Proc. SPIE 3997, p. 867-873, 2000.
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  148. Kedzierski, J., Anderson, E., and Bokor, J. "Calixarene G-line double resist process with 15 nm resolution and large area exposure capability," J. Vac. Sci. Technol. B 18(6), 3428-3430, 2000.  

  149. Kedzierski, J., Xuan, P., Anderson, E. H., Bokor, J., King, T.-J., and Hu, C. "Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime," IEDM Technical Digest, p. 57-60, 2000.  

  150. Kedzierski, J., Xuan, P., Subramanian, V., Bokor, J., King, T.-J., Hu, C., and Anderson, E. "A 20 nm gate-length ultra-thin body p-MOSFET with silicide source/drain," Superlattices and Microstructures 28 (5/6), 445-452, 2000.  

  151. Lee, S. H., Naulleau, P., Goldberg, K. A., Cho, C. H., and Bokor, J. "EUV holographic aerial image recording," Proc. SPIE 3997, p. 823-827, 2000.
  152. Lee, S. H., Piao, F., Naulleau, P., Goldberg, K. A., Oldham, W., and Bokor, J. "At-wavelength characterization of DUV-radiation-induced damage in fused silica," Proc. SPIE 3998, p. 724-731, 2000.
  153. Naulleau, P., Goldberg, K. A., Gullikson, E. M., and Bokor, J. "At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems," Appl. Opt. 39 (17), 2941-2947, 2000.  

  154. Naulleau, P., Goldberg, K. A., Lee, S. H., Chang, C., Attwood, D., and Bokor, J. "The EUV phase-shifting point diffraction interferometer," Proc. Eleventh U.S. National Synchrotron Radiation Instrumentation Conf., New York: American Institute of Physics, p. 66-72, 2000.  

  155. Naulleau, P., Goldberg, K. A., Lee, S. H., Chang, C., Batson, P., Attwood, D., and Bokor, J. "The PS/PDI: A high accuracy development tool for diffraction limited short-wavelength optics," Proc. Sixth International Conf. on X-ray Microscopy, New York: American Institute of Physics, p. 595-600, 2000.  

  156. Naulleau, P. P., Cho, C. H., Gullikson, E. M., and Bokor, J. "Transmission phase gratings for EUV interferometry," J. Synchrotron Rad. 7 (6), 405-410, 2000.  

  157. Naulleau, P. P., Goldberg, K. A., and Bokor, J. "Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system," J. Vac. Sci. Technol. B 18(6), 2939-2943, 2000.  

  158. Tang, S. H., Xuan, P., Bokor, J., and Hu, C. "Comparison of short-channel effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs," Proc. IEEE International SOI Conf., p. 120-121, 2000.  

  159. Xuan, P., Kedzierski, J., Subramanian, V., Bokor, J., King, T.-J., and Hu, C. "60nm planarized ultra-thin body solid phase epitaxy MOSFETs," 58th Annual Device Research Conf. Digest, p. 67-68, 2000.  

  160. Yeo, Y. C., Subramanian, V., Kedzierski, J., Xuan, P., King, T.-J., Bokor, J., and Hu, C. "Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel," IEEE Electron Device Lett. 21 (4), 161-163, 2000.  

  161. Yi, M., Jeong, S., Rekawa, S., and Bokor, J. "Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns," J. Vac. Sci. Technol. B 18(6), 2930-2934, 2000.  

  162. Choi, Y.-K., Lindert, N., Xuan, P., Tang, S., Ha, D., Anderson, E., King, T.-J., Bokor, J., and Hu, C. "Sub-20nm CMOS FinFET technologies," IEDM Technical Digest, p. 421-424, 2001.  

  163. Goldberg, K. A. and Bokor, J. "Fourier-transform method of phase-shift determination," Appl. Opt. 40 (17), 2886-2894, 2001.  

  164. Huang, X., Lee, W.-C., Kuo, C., Hisamoto, D., Chang, L., Kedzierski, J., Anderson, E., Takeuchi, H., Choi, Y.-K., Asano, K., Subramanian, V., King, T.-J., Bokor, J., and Hu, C. "Sub-50 nm P-channel FinFET," IEEE Trans. Electron Dev. 48 (5), 880-886, 2001.  

  165. Kedzierski, J., Ieong, M. K., Xuan, P., Bokor, J., King, T.-J., and Hu, C. "Design analysis of thin-body silicide source/drain devices," Proc. IEEE International SOI Conf., New York: IEEE, p. 21-22, 2001.  

  166. Lee, S. H., Naulleau, P., Goldberg, K. A., Cho, C. H., Jeong, S. T., and Bokor, J. "Extreme-ultraviolet lensless Fourier-transform holography," Appl. Opt. 40 (16), 2655-2661, 2001.  

  167. Lindert, N., Chang, L., Choi, Y.-K., Anderson, E. H., Lee, W.-C., King, T.-J., Bokor, J., and Hu, C. "Sub-60-nm quasi-planar FinFETs fabricated using a simplified process," IEEE Electron Device Lett. 22 (10), 487-489, 2001.  

  168. Lindert, N., Choi, Y.-K., Chang, L., Anderson, E., Lee, W.-C., King, T.-J., Bokor, J., and Hu, C. "Quasi-planar FinFETs with selectively grown germanium raised source/drain," Proc. of IEEE International SOI Conf., pp. 111-112, 2001.  

  169. Naulleau, P., Goldberg, K. A., Anderson, E. H., Batson, P., Denham, P. E., Jackson, K. H., Gullikson, E. M., Rekawa, S., and Bokor, J. "At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic," J. Vac. Sci. Technol. B 19(6), 2396-2400, 2001.  

  170. Naulleau, P., Goldberg, K. A., Anderson, E. H., Batson, P., Denham, P., Jackson, K., Rekawa, S., and Bokor, J. "Adding static printing capabilities to the EUV phase-shifting point diffraction interferometer," Proc. SPIE 4343, p. 639-645, 2001.  

  171. Naulleau, P. P., Anderson, E. H., Gullikson, E. M., and Bokor, J. "Fabrication of high-efficiency multilayer-coated binary blazed gratings in the EUV regime," Opt. Comm. 200, 27-34, 2001.  

  172. Shumway, M. D., Lee, S. H., Cho, C. H., Naulleau, P., Goldberg, K. A., and Bokor, J. "Extremely fine-pitch printing with a 10× Schwarzschild optic at extreme ultraviolet wavelengths," Proc. SPIE 4343, p. 357-362, 2001.  

  173. Tichenor, D. A., Ray-Chaudhuri, A. K., Lee, S. H., Chapman, H. N., Replogle, W. C., Berger, K. W., Stulen, R. H., Kubiak, G. D., Klebanoff, L. E., Wronosky, J. B., O'Connell, D. J., Leung, A. H., Jefferson, K. L., Ballard, W. P., Hale, L. C., Blaedel, K., Taylor, J. S., Folta, J. A., Spiller, E., Soufli, R., Sommargren, G. E., Sweeney, D. W., Naulleau, P., Goldberg, K. A., Gullikson, E. M., Bokor, J., Attwood, D. T., Mickan, U., Hanzen, R., Panning, E., Yan, P.-Y., Bjorkholm, J. E., and Gwyn, C. W. "Initial results of the EUV Engineering Test Stand," pp. 10, 2001.
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  176. Yi, M., Haga, T., Walton, C., and Bokor, J. "High sensitivity actinic detection of native defects on extreme ultraviolet lithography mask blanks," J. Vac. Sci. Technol. B 19(6), 2401-2405, 2001.  

  177. Choi, Y.-K., Chang, L., Ranade, P., Lee, J.-S., Ha, D., Balasubramanian, S., Agarwal, A., Ameen, M., King, T.-J., and Bokor, J. "FinFET process refinements for improved mobility and gate work function engineering," IEDM Technical Digest, p. 259-262, 2002.  

  178. Goldberg, K. A., Naulleau, P., and Bokor, J. "Fourier transform interferometer alignment method," Appl. Opt. 41 (22), 4477-4483, 2002.  

  179. Goldberg, K. A., Naulleau, P., Bokor, J., and Chapman, H. N. "Honing the accuracy of extreme ultraviolet optical system testing: At-wavelength and visible-light measurements of the ETS Set-2 projection optic," Proc. SPIE 4688, p. 329-337, 2002.  

  180. Goldberg, K. A., Naulleau, P., Bokor, J., Chapman, H. N., and Barty, A. "Testing extreme ultraviolet optics with visible-light and extreme ultraviolet interferometry," J. Vac. Sci. Technol. B 20(6), 2834-2839, 2002.  

  181. Lee, J.-S., Choi, Y.-K., Ha, D., King, T.-J., and Bokor, J. "Low-frequency noise characteristics in p-channel FinFETs," IEEE Electron Device Lett. 23 (12), 722-724, 2002.  

  182. Liu, H., Xiong, Z., Sin, J. K. O., Xuan, P., and Bokor, J. "A high performance double-gate SOI MOSFET using lateral solid phase epitaxy," Proc. IEEE International SOI Conf., p. 28-29, 2002.  

  183. Naulleau, P., Goldberg, K. A., Anderson, E. H., Attwood, D., Batson, P., Bokor, J., Denham, P., Gullikson, E., Harteneck, B., Hoef, B., Jackson, K., Olynick, D., Rekawa, S., Salmassi, F., Blaedel, K., Chapman, H., Hale, L., Mirkarimi, P., Soufli, R., Spiller, E., Sweeney, D., Taylor, J., Walton, C., O'Connell, D., Tichenor, D., Gwyn, C. W., Yan, P.-Y., and Zhang G. "Sub-70 nm extreme ultraviolet lithography at the Advanced Light Source static microfield exposure station using the engineering test stand set-2 optic," J. Vac. Sci. Technol. B 20(6), 2829-2833, 2002.  

  184. Naulleau, P. P., Goldberg, K. A., Anderson, E. H., Attwood, D., Batson, P., Bokor, J., Denham, P., Gullikson, E., Harteneck, B., Hoef, B., Jackson, K., Olynick, D., Rekawa, S., Salmassi, F., Blaedel, K., Chapman, H., Hale, L., Soufli, R., Spiller, E., Sweeney, D., Taylor, J., Walton, C., Ray-Chaudhuri, A., O'Connell, D., Stulen, R., Tichenor, D., Gwyn, C. W., Yan, P.-Y., and Zhang G. "Static microfield printing at the Advanced Light Source with the ETS Set-2 optic," Proc. SPIE 4688, p. 61-71, 2002.  

  185. Park, M., Yi, M., Mirkarimi, P., Larson, C., and Bokor, J. "Characterization of extreme ultraviolet lithography mask defects by actinic inspection with broadband extreme ultraviolet illumination," J. Vac. Sci. Technol. B 20(6), 3000-3005, 2002.  

  186. Schenkel, T., Persaud, A., Park, S. J., Meijer, J., Kingsley, J. R., McDonald, J. W., Holder, J. P., Bokor, J., and Schneider, D. H. "Single ion implantation for solid state quantum computer development," J. Vac. Sci. Technol. B 20(6), 2819-2823, 2002.  

  187. Xiong, S., Bokor, J., Xiang, Q., Fisher, P., Dudley, I., and Rao, P. "Study of gate line edge roughness effects in 50 nm bulk MOSFET devices," Proc. SPIE 4689, p. 733-741, 2002.  

  188. Yeo, Y.-C., Subramanian, V., Kedzierski, J., Xuan, P., King, T.-J., Bokor, J., and Hu, C. "Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel," IEEE Trans. Electron Dev. 49 (2), 279-286, 2002.  

  189. Yi, M., Haga, T., Walton, C., Larson, C., and Bokor, J. "'Actinic-only'defects in extreme ultraviolet lithography mask blanks-Native defects at the detection limit of visible-light inspection tools," Jpn. J. Appl. Phys. 41 (Part 1, No. 6B), 4101-4104, 2002.  

  190. Yi, M., Park, M., Mirkarimi, P., Larson, C., and Bokor, J. "At-wavelength inspection of defect smoothing in EUVL masks," Proc. SPIE 4688, p. 395-400, 2002.
  191. Yu, B., Chang, L., Ahmed, S., Wang, H., Bell, S., Yang, C.-Y., Tabery, C., Ho, C., Xiang, Q., King, T.-J., Bokor, J., Hu, C., Lin, M.-R., and Kyser, D. "FinFET scaling to 10nm gate length," IEDM Technical Digest, p. 251-254, 2002.  

  192. Chang, L., Choi, Y.-K., Ha, D., Ranade, P., Xiong, S., Bokor, J., Hu, C., and King, T.-J. "Extremely scaled silicon nano-CMOS devices," Proc. IEEE 91 (11), 1860-1873, 2003.  

  193. Chang, L., Choi, Y.-K., Kedzierski, J., Lindert, N., Xuan, P., Bokor, J., Hu, C., and King, T.-J. "Moore's Law lives on," IEEE Circuits and Devices Mag. 19 (1), 35-42, 2003.  

  194. Choi, Y.-K., Grunes, J., Lee, J. S., Zhu, J., Somorjai, G. A., Lee, L. P., and Bokor, J. "Sub-lithographic patterning technology for nanowire model catalysts and DNA label-free hybridization detection," Proc. SPIE 5220, 10-19, 2003.  

  195. Choi, Y.-K., Ha, D., King, T.-J., and Bokor, J. "Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs," Jpn. J. Appl. Phys. 42 (Part 1, No. 4B), 2073-2076, 2003.  

  196. Choi, Y.-K., Ha, D., Snow, E., Bokor, J., and King, T.-J. "Reliability study of CMOS FinFETs," IEDM Technical Digest, p. 177-180, 2003.  

  197. Choi, Y.-K., Lee, J. S., Zhu, J., Somorjai, G. A., Lee, L. P., and Bokor, J. "Sublithographic nanofabrication technology for nanocatalysts and DNA chips," J. Vac. Sci. Technol. B 21(6), 2951-2955, 2003.  

  198. Choi, Y.-K., Zhu, J., Grunes, J., Bokor, J., and Somorjai, G. A. "Fabrication of sub-10-nm silicon nanowire arrays by size reduction lithography," J. Phys. Chem. B 107 (15), 3340-3343, 2003.  

  199. Goldberg, K. A., Naulleau, P., Denham, P., Rekawa, S. B., Jackson, K., Anderson, E. H., Liddle, J. A., and Bokor, J. "EUV interferometry of the 0.3-NA MET optic," Proc. SPIE 5037, p. 69-74, 2003.  

  200. Goldberg, K. A., Naulleau, P., Rekawa, S., Denham, P., Liddle, J. A., Anderson, E., Jackson, K., Bokor, J., and Attwood, D. "At-wavelength interferometry of high-NA diffraction-limited EUV optics," Proc. Eighth International Synchrotron Radiation Instrumentation Conf., August 28, 2003, pp. 4.
  201. Lee, J.-S., Choi, Y.-K., Ha, D., Balasubramanian, S., King, T.-J., and Bokor, J. "Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETS," IEEE Electron Device Lett. 24 (3), 186-188, 2003.  

  202. Lee, J.-S., Ha, D., Choi, Y.-K., King, T.-J., and Bokor, J. "Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate," IEEE Electron Device Lett. 24 (1), 31-33, 2003.  

  203. Naulleau, P., Goldberg, K. A., Anderson, E. H., Bokor, J., Gullikson, E., Harteneck, B., Jackson, K., Olynick, D., Salmassi, F., Baker, S., Mirkarimi, P., Spiller, E., Walton, C., and Zhang, G. "Lithographic characterization of the printability of programmed extreme ultraviolet substrate defects," J. Vac. Sci. Technol. B 21(4), 1286-1290, 2003.  

  204. Naulleau, P., Goldberg, K. A., Anderson, E. H., Bokor, J., Harteneck, B., Jackson, K., Olynick, D., Salmassi, F., Baker, S., Mirkarimi, P., Spiller, E., Walton, C., O'Connell, D., Yan, P.-Y., and Zhang, G. "Printing-based performance analysis of the engineering test stand set-2 optic using a synchrotron exposure station with variable sigma," J. Vac. Sci. Technol. B 21(6), 2697-2700, 2003.  

  205. Naulleau, P., Goldberg, K. A., Anderson, E. H., Bokor, J., Harteneck, B., Jackson, K., Olynick, D., Salmassi, F., Baker, S., Mirkarimi, P., Spiller, E., Walton, C., O'Connell, D., Yan, P.-Y., and Zhang, G. "Static EUV micro-exposures using the ETS Set-2 optics," Proc. SPIE 5037, p. 36-46, 2003.
  206. Naulleau, P. P., Goldberg, K. A., Batson, P., Bokor, J., Denham, P., and Rekawa, S. "Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography," Appl. Opt. 42 (5), 820-826, 2003.  

  207. Pu, N.-W. and Bokor, J. "Study of surface and bulk acoustic phonon excitations in superlattices using picosecond ultrasonics," Phys. Rev. Lett. 91 (7), 076101/1-4, 2003.  

  208. Schenkel, T., Persaud, A., Park, S. J., Nilsson, J., Bokor, J., Liddle, J. A., Keller, R., Schneider, D. H., Cheng, D. W., and Humphries, D. E. "Solid state quantum computer development in silicon with single ion implantation," J. Appl. Phys. 94 (11), 7017-7024, 2003.  

  209. Shumway, M. D., Naulleau, P., Goldberg, K. A., Snow, E. L., and Bokor, J. "Resist evaluation at 50 nm in the EUV using interferometric spatial frequency doubled imaging," Proc. SPIE 5037, p. 910-916, 2003.  

  210. Xiong, S. and Bokor, J. "Sensitivity of double-gate and FinFET devices to process variations," IEEE Trans. Electron Dev. 50 (11), 2255-2261, 2003.  

  211. Xuan, P. and Bokor, J. "Investigation of NiSi and TiSi as CMOS gate materials," IEEE Electron Device Lett. 24 (10), 634-636, 2003.  

  212. Xuan, P., She, M., Harteneck, B., Liddle, A., Bokor, J., and King, T.-J. "FinFET SONOS flash memory for embedded applications," IEDM Technical Digest, p. 609-612, 2003.  

  213. Liu, H., Sin, J. K. O., Xuan, P., and Bokor, J. "Characterization of the ultrathin vertical channel CMOS technology," IEEE Trans. Electron Dev. 51 (1), 106-112, 2004.  

  214. Shumway, M. D., Snow, E. L., Goldberg, K. A., Naulleau, P., Cao, H., Chandhok, M., Liddle, J. A., Anderson, E. H., and Bokor, J. "EUV resist imaging below 50 nm using coherent spatial filtering techniques," Proc. SPIE 5374, 454-459, 2004.  

  215. Tseng, Y.-C., Xuan, P., Javey, A., Malloy, R., Wang, Q., Bokor, J., and Dai, H. "Monolithic integration of carbon nanotube devices with silicon MOS technology," Nano Lett. 4 (1), 123-127, 2004.  

  216. Wang, Y., Bokor, J., and Lee, A. "Maskless lithography using drop-on-demand inkjet printing method," Proc. SPIE 5374, p. 628-636, 2004.  

  217. Xiong, S. and Bokor, J. "A simulation study of gate line edge roughness effects on doping profiles of short-channel MOSFET devices," IEEE Trans. Electron Dev. 51 (2), 228-232, 2004.  
  218. Yagishita A, King TJ, Bokor J, “Schottky barrier height reduction and drive current improvement in metal source/drain MOSFET with strained-Si channel,” Jap. J. Appl.Phys. Part 1 43 (4B): 1713-1716 April 2004.
  219. Schenkel T, Rangelow IW, Keller R, Park SJ, Nilsson J, Persaud A, Radmilovic VR, Grabiec P, Schneider DH, Liddle JA, Bokor J “Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation,” Nucl. Instrum. & Meth. In Phys. Res. B- 219: 200-205 June 2004.
  220. Park S-J, Persaud A, Liddle JA, Nilsson J, Bokor J, Schneider DH, Rangelow IW, Schenkel T. “Processing issues in top-down approaches to quantum computer development in silicon.” Microelect. Eng., vol.73-74, June 2004, pp. 695-700.
  221. San Paulo A, Liu X, Bokor J. “Atomic Force Microscopy characterization of electromechanical properties of RF acoustic bulk wave resonators,” 17th IEEE Int. Conf. on MEMS 2004 Technical Digest. IEEE. 2004, pp. 169-72.
  222. Shiying Xiong, Bokor J, Qi Xiang, Fisher P, Dudley I, Paula Rao, Haihong Wang, En B. "Is gate line edge roughness a first-order issue in affecting the performance of deep sub-micro bulk MOSFET devices?," IEEE Trans. on Semic. Manuf., vol.17, no.3, Aug. 2004, pp. 357-61.
  223. Park SJ, Liddle JA, Persaud A, Allen FI, Schenkel T, Bokor J “Formation of 15 nm scale Coulomb blockade structures in silicon by electron beam lithography with a bilayer resist process,” J. Vac. Sci. & Technol. B 22 (6): 3115-3118 Nov.-Dec. 2004.
  224. Persaud A, Allen FI, Giccluel F, Park SJ, Liddle JA, Schenkel T, Ivanov T, Ivanova K, Rangelow IW, Bokor J “Single ion implantation with scanning probe alignment,” J. Vac. Sci. & Technol. B 22 (6): 2992-2994 Nov.-Dec. 2004.
  225. San Paulo A, Liu X, Bokor J. “Scanning acoustic force microscopy characterization of thermal expansion effects on the electromechanical properties of film bulk acoustic resonators,” Appl. Phys. Lett., vol.86, no.8, 21 Feb. 2005, pp. 84102-1-3.
  226. Shiying Xiong, Bokor J. “Structural optimization of SUTBDG devices for low-power applications,” IEEE Trans. Elect. Dev., vol.52, no.3, March 2005, pp. 360-6.
  227. Yan XM, Kwon S, Contreras AM, Bokor J, Somorjai GA “Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography ,” Nano Lett. 5 (4): 745-748 April 2005.
  228. Shiying Xiong, Tsu-Jae King, Bokor J. “Study of the extrinsic parasitics in nano-scale transistors,” Semi. Sci. and Technol., vol.20, no.6, June 2005, pp. 652-7.
  229. Liu X, San Paulo A, Park M, Bokor J. “Characterization of acoustic vibration modes at GHz frequencies in bulk acoustic wave resonators by combination of scanning laser interferometry and scanning acoustic force microscopy,” 18th IEEE Int. Conf. on MEMS, Technical Digest, IEEE. 2005, pp. 175-8.
  230. Persaud A, Park SJ, Liddle JA, Schenkel T, Bokor J, Rangelow IW “Integration of scanning probes and ion beams,” Nano Letters 5 (6): 1087-1091 June 2005.
  231. Qureshi N, Wang SQ, Lowther MA, Hawkins AR, Kwon S, Liddle A, Bokor J, Schmidt H “Cavity-enhanced magnetooptical observation of magnetization reversal in individual single-domain nanomagnets,” Nano Lett., 5 (7): 1413-1417 Jul. 2005
  232. San Paulo A, Bokor J, Howe RT, He R, Yang P, Gao D, Carraro C, Maboudian R “Mechanical elasticity of single and double clamped silicon nanobeams fabricated by the vapor-liquid-solid method,” Appl. Phys. Lett., 87 (5): Art. No. 053111 Aug. 1 2005
  233. Xiong, SY; King, TJ; Bokor, J “A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain,” IEEE Trans. Elect. Dev., 52 (8): 1859-1867 Aug. 2005
  234. Lin, J; Xuan, P; Bokor, J “Characterization of chemical vapor deposition growth yields of carbon nanotube transistors,” Jap. J. Appl. Phys. Pt. 1, 44 (9A): 6859-6861 Sep. 2005
  235. Yan XM, Kwon S, Contreras AM, Koebel MM, Bokor J, Somorjai GA “Fabrication of dense arrays of platinum nanowires on silica, alumina, zirconia and ceria surfaces as 2-D model catalysts,” Catal. Lett., 105 (3-4): 127-132 Dec. 2005
  236. Kwon S, Yan XM, Contreras AM, Liddle JA, Somorjai GA, Bokor J “Fabrication of metallic nanodots in large-area arrays by mold-to-mold cross imprinting (MTMCI),” Nano Lett., 5 (12): 2557-2562 Dec. 2005
  237. Persaud A, Liddle JA, Schenkel T, Bokor J, Ivanov T, Rangelow IW “Ion implantation with scanning probe alignment,” J. Vac. Sci. Technol. B, 23 (6): 2798-2800 Nov.-Dec. 2005
  238. Schenkel T, Liddle JA, Persaud A, Tyryshkin AM, Lyon SA, de Sousa R, Whaley KB, Bokor J, Shangkuan J, Chakarov I “Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon,” Appl. Phys. Lett., 88 (11): Art. No. 112101 Mar 13 2006
  239. Schenkel T, Liddle JA, Bokor J, Persaud A, Park SJ, Shangkuan J, Lo CC, Kwon S, Lyon SA, Tyryshkin AM, Rangelow IW, Sarov Y, Schneider DH, Ager J, de Sousa R “Strategies for integration of donor electron spin qubits in silicon.” Microelect. Eng., 83 (4-9): 1814-1817 Apr. 2006

     
Last updated 9/2/06